Chin J Mater Res  1996, Vol. 10 Issue (3): 289-292    DOI:

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INCORPORATION EFFECT OF NITROGEN INTO nc-SiN_x:H FILMS

HAN Weiqiang;HAN Gaorong; NIE Donglin;DING Zishang(Zhejiang University;Tsinghua University;Shangdong Bwilding Materials Industry College)(Correspondent:HAN Weiqiang;Department of Physics;Tsinghua University;Beijing 100084)

HAN Weiqiang;HAN Gaorong; NIE Donglin;DING Zishang(Zhejiang University;Tsinghua University;Shangdong Bwilding Materials Industry College)(Correspondent:HAN Weiqiang;Department of Physics;Tsinghua University;Beijing 100084). INCORPORATION EFFECT OF NITROGEN INTO nc-SiN_x:H FILMS. Chin J Mater Res, 1996, 10(3): 289-292.

Abstract References Related Articles Recommended Metrics Download:  PDF(1430KB)  Export:  BibTeX | EndNote (RIS)       Abstract  Undoped nanocrystalline silicon nitrogen(nc-SiNx:H)films were prepared by rf glow discharge of heavily hydrogen(H2)diluted silane(SiH4) and nitrogen (N2).The volume fraction of the crystalline phase and mean grains size were varied from 58%-14% and 10nm-5 Key words:  nanocrystalline silicon nitrogen crystallization ratio mean grains size dark conductivity      Received:  25 June 1996      Service E-mail this article Add to citation manager E-mail Alert RSS （） Articles by authors URL:  https://www.cjmr.org/EN/     OR     https://www.cjmr.org/EN/Y1996/V10/I3/289 1MattenbergerF,VeprekS．Chemtronics,1986,1:1072OtobeM,OdaS．JpnJApplPhys,1992,31:19483何宇亮,殷晨钟．半导体学报,1992,13:6834HANW,HANGMatResSocsymp,1993,297:3815FurukawaS,MiyasatoT,PhysRevB,1988,38:57266TakagiHetal、ApplPhysLett,1990,56:23797FortunateEetal．JNon—CrystSolids1989,115;1208HasegawaSetal．JapJApplPhys．1986,25;L9349KarcherRetal．PhsRevB,1984,30:1896 No related articles found! No Suggested Reading articles found! Viewed Full text Abstract Cited   Shared      Discussed