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材料研究学报  2007, Vol. 21 Issue (4): 409-413    
  论文 本期目录 | 过刊浏览 |
Si基外延GaN的结构和力学性能
魏同波  王军喜  刘喆  李晋闽
引用本文:

魏同波; 王军喜; 刘喆; 李晋闽 . Si基外延GaN的结构和力学性能[J]. 材料研究学报, 2007, 21(4): 409-413.

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摘要: 采用MOCVD技术在Si衬底(111)面上生长了GaN外延膜,分析了薄膜表面形貌和Si基GaN的临界载荷,研究了表面发光性能和GaN晶体质量随深度的变化.结果表明,外延层的表面比较平整,多组超晶格插入层可以进一步降低位错密度,提高晶体质量.膜的表面有许多颗粒状的发光中心,除了强的带边峰外,还有弱的黄光带和红光带,这可能是ON与VGa所产生的深能级跃迁产生的.GaN的晶体质量具有梯度变化,GaN外延层的上层晶体质量比较好,界面附近比较差,但是外延层与衬底的结合强度较高,临界载荷达到2.05 N.
Key words
收稿日期: 1900-01-01     
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