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材料研究学报  2007, Vol. 21 Issue (4): 384-388    
  论文 本期目录 | 过刊浏览 |
碳离子注入对硅片微摩擦学行为的影响
张德坤  葛世荣
引用本文:

张德坤; 葛世荣 . 碳离子注入对硅片微摩擦学行为的影响[J]. 材料研究学报, 2007, 21(4): 384-388.

全文: PDF(951 KB)  
摘要: 对单晶硅片进行不同剂量的碳离子注入,测量碳离子注入前后硅片的纳米硬度、弹性模量、硅表面与探针之间的摩擦系数和划痕深度以及硅片与Si3N4球的摩擦磨损,研究试样在过程中摩擦系数及磨损量的变化.结果表明,碳离子注入可能导致硅片表面结构的改变,从而影响了力学性能,但改善了微摩擦学特性.碳离子注入剂量为2×1015 ions/cm2时硅片的纳米硬度和弹性模量都明显降低,但其划痕摩擦系数和划痕深度均大于未注入硅片;碳离子注入后硅片的减摩效果和耐磨性能在小载荷下得到了大幅度提高,当载荷达到一定值后,摩擦系数迅速增加并产生磨损痕迹.其磨损机制在小载荷下以粘着磨损为主,在大载荷下以材料的微疲劳和微断裂为主.
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收稿日期: 1900-01-01     
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