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材料研究学报  2007, Vol. 21 Issue (4): 371-376    
  论文 本期目录 | 过刊浏览 |
高度(002)择优取向Li+掺杂ZnO薄膜的制备和性能
陈祝  张树人  杨成韬
引用本文:

陈祝; 张树人; 杨成韬 . 高度(002)择优取向Li+掺杂ZnO薄膜的制备和性能[J]. 材料研究学报, 2007, 21(4): 371-376.

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摘要: 制备了不同摩尔浓度Li+掺杂ZnO-Li0.022陶瓷靶、并用RF射频磁控溅射工艺在Si(100)基片上制备ZnO薄膜,研究了溅射温度、氧分压和溅射功率等对ZnO薄膜微结构、表面形貌和择优取向的影响.结果表明:Li+的最佳掺杂量(摩尔分数)为2.2%,RF溅射的最佳基片温度Ts小于300 ℃,氩氧气氛体积比为Ar:O2=20:5,溅射功率50~60 W;制备出的ZnO薄膜高度c轴(002)择优取向、均匀、致密,其绝缘电阻率ρ为4.12×108 Ω·cm,满足研制声表面波器件(SAW)的要求.
Key words
收稿日期: 1900-01-01     
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