材料研究学报  1988, Vol. 2 Issue (4): 1-10

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光化学气相沉积非晶硅和微晶硅太阳电池的发展

李文范;刘秀英

中国科学院长春应用化学研究所;中国科学院长春应用化学研究所

THE DEVELOPING TREND OF AMORPHOUS SILICON AND MICROCRYSTALLINE SILICON SOLAR CELLS PREPARED BY THE PHOTOCHEMICAL VAPOR DEPOSITION

LI Wenfan;LIU Xiuying(Changchun Institute of Applied Chemistry;Academia Sinica)

李文范;刘秀英. 光化学气相沉积非晶硅和微晶硅太阳电池的发展[J]. 材料研究学报, 1988, 2(4): 1-10.
, . THE DEVELOPING TREND OF AMORPHOUS SILICON AND MICROCRYSTALLINE SILICON SOLAR CELLS PREPARED BY THE PHOTOCHEMICAL VAPOR DEPOSITION[J]. Chin J Mater Res, 1988, 2(4): 1-10.

摘要 参考文献 相关文章 Metrics 全文: PDF(739 KB)   摘要: 本文综述了光化学气相沉积(Photo-CVD)法分解硅烷(SiH_4、Si_2H_6)制备非晶硅(a-Si)膜的简单原理、a-Si 膜的性质、a-Si 和微晶硅(μc-Si)太阳电池的光伏特性。也介绍了a-Si 和μc-Si 太阳电池制备技术和发展现状。并指出Photo-CVD 法是制备高转换效率(η)太阳电池很有希望的一种方法。 Abstract：In this paper,the brief principle of amorphous silicon(a-Si)films fab-ricatedby the photochemical vapor deposition using decomposition of monosilaneand disilane is reviewed.The electrical and optical properties of a-Si filmsand the photovoltaic properties 收稿日期: 1988-08-25      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 李文范 刘秀英 44.8K 链接本文: https://www.cjmr.org/CN/      或      https://www.cjmr.org/CN/Y1988/V2/I4/1 1 Chittick R C et.al.J Electrochem Soc,1969;77:116 2 Spear W E et al.Solid State Commun.,1975;17:1193 3 Das S R.Thin Solid Films,1984;119(1) :31 4 胡坚.太阳能学报,1986;7(4) :425 5 仁田,昌二.固体物理,1983;18(1) :52． 6 Sakai H et al.In:Ya Pei-Nuo ed.Proc of 2nd Int PVSEC,Beijing,Adfield Advertising Co Ltd,Hong Kong,1986:890 7 Hamakama Y.In:Yu Pei-Nuo ed.Proc of 2nd Int PVSEC,Beijing,Adfield Advertising Co Ltd,Hong Kong,1986:351 8 Wallace Wet al.In:Yu Pei-Nuo ed.Proc of 2nd Int PVEEC,Beijing,Adfield Advertising,Co Ltd Hong Kong,1986:354 9 Wallace Wet al.In:Yu Pei-Nuo ed.Proc of 2nd Int PVSEC,Beijing,Adfield Advertising Co.,Ltd.,Hong Kong,1986:353 10 中国科学院能源处与日本太阳光发电调查团学术讨论会,1985年12月28-30日,北京 11 Mishima Y et al.J Non-Crysrystalline Solids,1983;59,60:707-710 12 Mishima Yet al.Jpn J Appl Phys,1983;22(1) :L46 13 Inoue T et al.Appl Phys Lett,1983;43(8) :774 14 Inoue T et al.Appl Phys Lett,1984;44(9) :871 15 Yamada A et al.Appl Phys Lett,1986;46(3) ;272 16 Tanaka T et al.Appl Phys Lett,1984;45(8) :865 17 Tarui Y et al.J Non-Crystalline Solids,1983;59,60:711 18 Gas S C et al.Appl Phys Lett,1981;39(5) :436 19 Scote B A et al.Appl Phys Lett,1991;39(1) :73 20 Saitoh T et al.Appl Phys Lett,1983;42(8) :768 21 Brekel C et al.JSo Electrochem c,1972;119:372 22 Peters J et al.Solid State Technology,1980;23(9) :121 23 Saitoh T et al.Jpn J Appl phys,1983;suppl.22-1,22:617 24 Nakano S et al.In:Yu Pei-Nuo ed.Proc of 2nd Int PVSEC,Beijing,Adfield Advertising Co Ltd,Hong Kong,1986:486 25 Nikt H et al.J Phys Chem,1964;68:304 26 Wakita K et al.Photographic Science and Engineering;1982,26(4) :183 27 Pollock T L et al.J Amer Chem Soc,1973;95:1017 28 Takei H et cl.J Appl Phys,1986;58(9) 3664 29 Kenne J et al.Jpn J Appl Phys,1985,24(8) :997 30 Nishida S ed al.Jpn J Apal Phys,1986,25(1) :17 31 Ichimura T et al.In:Yu Pei Nuo ed.Proc of 2nd Int PVSEC,Beijing,Adfield Advertising Co Ltd,Hong Kong,1986:543 32 Konagai M et al.In:Yu Pei Nuo ed.Proc of 2nd Int PVSEC,Beijing,Adfield Advertising Co Ltd,Hong Kong,1986:437 33 Konagai Met al.In:Yu Pei Nuo,ed.Proc of 2nd Int PVSEC,Beijing,Adfield Advertisising Co Ltd,Hong Kong,1986:417& No related articles found! Viewed Full text Abstract Cited   Shared      Discussed