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工艺参数对Sol—Gel法制备的PLZT铁电薄膜结构和性能的影响 |
阎培渝;李龙土;张孝文 |
清华大学 |
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THE PROCESSING EFFECTS ON STRUCTURE AND PROPERTIES OF SOL-GEL DERIVED PLZT FERROELECTRIC THIN FILMS |
YAN Peiyu LI Longtu ZHANG Xiaowen(Tsinghua University)(Correspondent: YAN Peiyu;Dept.of Materials Science and Engineering;Tsinghua University;Beijing 100084) |
引用本文:
阎培渝;李龙土;张孝文. 工艺参数对Sol—Gel法制备的PLZT铁电薄膜结构和性能的影响[J]. 材料研究学报, 1995, 9(6): 535-538.
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THE PROCESSING EFFECTS ON STRUCTURE AND PROPERTIES OF SOL-GEL DERIVED PLZT FERROELECTRIC THIN FILMS[J]. Chin J Mater Res, 1995, 9(6): 535-538.
1HaertlingGH,Ferroelectrics,1992;131:12KwokCK,DesuSB,JMaterRes,1993;8(2):3393DormansGJM,deKeuserM,vanVeidhovenPJ.MatResSocSympProc,1992,243:203, |
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