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材料研究学报  2001, Vol. 15 Issue (4): 454-458    
  论文 本期目录 | 过刊浏览 |
用PMCZ法生长的单晶硅中氧和电阻率的均匀性
张维连1;孙军生1;张恩怀1;李嘉席1;吴小双2;高树良2;胡元庆2;刘俊奇2
1.河北工业大学;2.天津半导体材料厂
引用本文:

张维连; 孙军生; 张恩怀; 李嘉席; 吴小双; 高树良; 胡元庆; 刘俊奇 . 用PMCZ法生长的单晶硅中氧和电阻率的均匀性[J]. 材料研究学报, 2001, 15(4): 454-458.

全文: PDF(435 KB)  
摘要: 用永磁体环形磁场直拉(PMCZ)炉代替普通的MCZ炉生长了质量较高的单晶硅.在PMCZ炉中水平辐射状磁力线均匀分布,可有效地抑制熔体中不规则的对流和固液界面处的温度波动,降低以至消除微观生长速率的起伏. 在用PMCZ法生长的硅晶体中氧浓度较低,杂质的径向分布均匀性好. 简单地讨论了PMCZ法控氧优于普通MCZ法的机理.
关键词 永磁场直拉(PMCZ)炉热对流氧杂质    
Key words
收稿日期: 1900-01-01     
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