制备工艺参数对磁控溅射Ni5Pt薄膜的影响

张铭原, 闻明, 李思勰, 张滨, 张广平

Effect of Processing Parameters on Magnetron Sputtering Preparation of High-quality Ni5Pt Films for Schottky Diodes

ZHANG Mingyuan, WEN Ming, LI Sixie, ZHANG Bin, ZHANG Guangping

表2 Ni5Pt薄膜发生断裂的临界厚度和临界沉积时间

Table 2 Critical thickness and critical sputtering time for fracture of Ni5Pt films

Substrate conditions Thickness / nm Sputtering time / min Si(100)-RT 38.74 4.37 Si(100)-50 oC 39.20 4.61 Si(100)-100 oC 41.54 4.79 Si(111)-RT 36.26 4.09 Si(111)-50 oC 37.42 4.40 Si(111)-100 oC 39.81 4.59