制备工艺参数对磁控溅射Ni5Pt薄膜的影响

张铭原, 闻明, 李思勰, 张滨, 张广平

Effect of Processing Parameters on Magnetron Sputtering Preparation of High-quality Ni5Pt Films for Schottky Diodes

ZHANG Mingyuan, WEN Ming, LI Sixie, ZHANG Bin, ZHANG Guangping

表1 Ni5Pt样品的编号和名称

Table 1 Codes and nomenclature of Ni5Pt film

Numbers Names Substrate orientation Substrate temperature Sputtering time / min 1# Si(100)-RT1M (100) RT 1 2# Si(100)-RT5M (100) RT 5 3# Si(100)-RT10M (100) RT 10 4# Si(100)-RT15M (100) RT 15 5# Si(100)-RT30M (100) RT 30 6# Si(100)-50 oC1M (100) 50 oC 1 7# Si(100)-50 oC5M (100) 50 oC 5 8# Si(100)-50 oC10M (100) 50 oC 10 9# Si(100)-50 oC15M (100) 50 oC 15 10# Si(100)-50 oC30M (100) 50 oC 30 11# Si(100)-100 oC1M (100) 100 oC 1 12# Si(100)-100 oC5 M (100) 100 oC 5 13# Si(100)-100 oC10M (100) 100 oC 10 14# Si(100)-100 oC15M (100) 100 oC 15 15# Si(100)-100 oC30M (100) 100 oC 30 16# Si(111)-RT1M (111) RT 1 17# Si(111)-RT5M (111) RT 5 18# Si(111)-RT10M (111) RT 10 19# Si(111)-RT15M (111) RT 15 20# Si(111)-RT30M (111) RT 30 21# Si(111)-50 oC1M (111) 50 oC 1 22# Si(111)-50 oC5M (111) 50 oC 5 23# Si(111)-50 oC10M (111) 50 oC 10 24# Si(111)-50 oC15M (111) 50 oC 15 25# Si(111)-50 oC30M (111) 50 oC 30 26# Si(111)-100 oC1M (111) 100 oC 1 27# Si(111)-100 oC5M (111) 100 oC 5 28# Si(111)-100 oC10M (111) 100 oC 10 29# Si(111)-100 oC15M (111) 100 oC 15 30# Si(111)-100 oC30M (111) 100 oC 30