制备工艺参数对磁控溅射Ni5Pt薄膜的影响

张铭原, 闻明, 李思勰, 张滨, 张广平

Effect of Processing Parameters on Magnetron Sputtering Preparation of High-quality Ni5Pt Films for Schottky Diodes

ZHANG Mingyuan, WEN Ming, LI Sixie, ZHANG Bin, ZHANG Guangping

图5 在三种温度的Si(100)基底上沉积不同时间的Ni5Pt合金薄膜的表面AFM照片

Fig.5 AFM observations of Ni5Pt films deposited on Si(100) substrates at room temperature (a-e), 50 oC (f-j), and 100 oC (k-o) with varying sputtering time of 1 min (a, f, k), 5 min (b, g, l), 10 min (c, h, m), 15 min (d, i, n), and 30 min (e, j, o)