制备工艺参数对磁控溅射Ni5Pt薄膜的影响
Effect of Processing Parameters on Magnetron Sputtering Preparation of High-quality Ni5Pt Films for Schottky Diodes
制备工艺参数对磁控溅射Ni5Pt薄膜的影响 |
| 张铭原, 闻明, 李思勰, 张滨, 张广平 |
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Effect of Processing Parameters on Magnetron Sputtering Preparation of High-quality Ni5Pt Films for Schottky Diodes |
| ZHANG Mingyuan, WEN Ming, LI Sixie, ZHANG Bin, ZHANG Guangping |
| 图3 在三种温度的Si(100)和Si(111)基底沉积不同时间的Ni5Pt薄膜的XRD谱 |
| Fig.3 XRD patterns of Ni5Pt films deposited with different sputtering time on Si(100) (a-c) and Si(111) (d-f) substrates at room temperature (a, d), 50 oC (b, e), and 100 oC (c, f) |
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