β-SiC半导体器件在滑动摩擦中材料去除行为的纳观分析

施渊吉, 程诚, 张海涛, 胡道春, 陈晶晶, 黎军顽

Nanoscale Analysis of Material Removal Behavior of β-SiC Semiconductor Devices during Sliding Wear

SHI Yuanji, CHENG Cheng, ZHANG Haitao, HU Daochun, CHEN Jingjing, LI Junwan

表1 β-SiC纳米滑动摩擦参数设置

Table 1 Simulation parameter setting of SiC material on nanofriction process

Simulation condition Parameters setting Model dimension (L) Lx (28.3 nm) × Ly (46.8 nm) ×Lz (26.3 nm) Cutting speed (V) 100 m/s, 200 m/s, 300 m/s Cutting depth (d) 3 nm, 5 nm, 7 nm Abrasive particle radius (R) 5 nm, 7 nm, 9 nm Newton layer (T) 1 K, 300 K, 800 K Crystal plane (001), (110), (111) Time step 1 fs