β-SiC半导体器件在滑动摩擦中材料去除行为的纳观分析

施渊吉, 程诚, 张海涛, 胡道春, 陈晶晶, 黎军顽

Nanoscale Analysis of Material Removal Behavior of β-SiC Semiconductor Devices during Sliding Wear

SHI Yuanji, CHENG Cheng, ZHANG Haitao, HU Daochun, CHEN Jingjing, LI Junwan

图10 滑动摩擦参数(温度、速度、压深、晶面)对β-SiC应力场分布的影响

Fig.10 Influence of sliding friction parameters for temperature, velocity, indentation depth and crystal plane on the stress field distribution of β-SiC