β-SiC半导体器件在滑动摩擦中材料去除行为的纳观分析

施渊吉, 程诚, 张海涛, 胡道春, 陈晶晶, 黎军顽

Nanoscale Analysis of Material Removal Behavior of β-SiC Semiconductor Devices during Sliding Wear

SHI Yuanji, CHENG Cheng, ZHANG Haitao, HU Daochun, CHEN Jingjing, LI Junwan

图8 滑动摩擦参数对β-SiC磨屑原子数的影响

Fig.8 Influence of sliding friction parameters on the atomic number of β-SiC with grinding chips (a) the influence of indentation depth on abrasive atoms, (b) the influence of temperature on abrasive atoms, (c) the influence of sliding speed on abrasive atoms, (d) the influence of crystal plane on abrasive atoms, (e) influence of sliding friction parameters on abrasive atoms