β-SiC半导体器件在滑动摩擦中材料去除行为的纳观分析

施渊吉, 程诚, 张海涛, 胡道春, 陈晶晶, 黎军顽

Nanoscale Analysis of Material Removal Behavior of β-SiC Semiconductor Devices during Sliding Wear

SHI Yuanji, CHENG Cheng, ZHANG Haitao, HU Daochun, CHEN Jingjing, LI Junwan

图7 滑动摩擦参数对β-SiC原子矢量位移的影响

Fig.7 Influence of sliding friction parameters on the vector displacement of β-SiC atoms (a-c) the influence of sliding speed and abrasive radius on the vector displacement of β-SiC, (d-f) the influence of temperature on the vector displacement of β-SiC, (g, h) the influence of sliding speed and indentation depth on the vector displacement of β-SiC