β-SiC半导体器件在滑动摩擦中材料去除行为的纳观分析

施渊吉, 程诚, 张海涛, 胡道春, 陈晶晶, 黎军顽

Nanoscale Analysis of Material Removal Behavior of β-SiC Semiconductor Devices during Sliding Wear

SHI Yuanji, CHENG Cheng, ZHANG Haitao, HU Daochun, CHEN Jingjing, LI Junwan

图5 晶面选择性和压深对β-SiC纳米滑动磨损的原子位移幅度影响

Fig.5 Influence of crystal plane selectivity and indentation depth on atomic displacement amplitude of β-SiC under nanosliding wear (a-e) effect of crystal plane and indentation depth on atomic displacement amplitude from top view, (a1-e1) effect of crystal plane and indentation depth on atomic displacement amplitude from back view