β-SiC半导体器件在滑动摩擦中材料去除行为的纳观分析

施渊吉, 程诚, 张海涛, 胡道春, 陈晶晶, 黎军顽

Nanoscale Analysis of Material Removal Behavior of β-SiC Semiconductor Devices during Sliding Wear

SHI Yuanji, CHENG Cheng, ZHANG Haitao, HU Daochun, CHEN Jingjing, LI Junwan

图3 温度对β-SiC纳米滑动磨损的原子位移幅度和剪切变形影响

Fig.3 Influence of temperature on atomic displacement amplitude and shear deformation of β-SiC under nano-sliding wear (a) effect of temperature on atomic displacement amplitude from top view, (b) effect of temperature on atomic displacement amplitude from back view, (c) effect of temperature on shear strain from back view