<strong>6H-SiC</strong>纳米磨削亚表面损伤机理的分子动力学研究

6H-SiC纳米磨削亚表面损伤机理的分子动力学研究

耿瑞文, 杨志豇, 杨蔚华, 谢启明, 游津京, 李立军, 吴海华

Molecular Dynamics Simulation of Subsurface Damage of 6H-SiC Bulk Materials Induced by Grinding with Nano-sized Diamond Particles

GENG Ruiwen, YANG Zhijiang, YANG Weihua, XIE Qiming, YOU Jinjing, LI Lijun, WU Haihua

表1 纳米磨削模拟参数

Table 1 Parameters in nano-grinding simulation

Parameter	Value
Workpiece dimension Grinding direction	25 nm × 13 nm × 16 nm $[\bar{1} 0 0]$
Grinding speed / m·s^-1	50、100、200
Grinding depth / nm	0.15
Tool radius / nm	4.9、5.4、5.9
Timestep / ps	0.001
Initial temperature / K	300
Ensemble	NVT, NVE