6H-SiC纳米磨削亚表面损伤机理的分子动力学研究

耿瑞文, 杨志豇, 杨蔚华, 谢启明, 游津京, 李立军, 吴海华

Molecular Dynamics Simulation of Subsurface Damage of 6H-SiC Bulk Materials Induced by Grinding with Nano-sized Diamond Particles

GENG Ruiwen, YANG Zhijiang, YANG Weihua, XIE Qiming, YOU Jinjing, LI Lijun, WU Haihua

图3 6H-SiC工件不同磨削速度和磨粒尺寸研究下的切屑原子数量和非晶原子数量

Fig.3 Number of chip atoms (a), the number (b) of amorphous atoms under different grinding speeds and abrasive grain sizes