碳化硅吸波材料的原位反应法制备及其机理

崔思凯, 付广艳, 林立海, 颜雨坤, 李处森

Preparation Process and Reaction Mechanism of Silicon Carbide Absorbing Materials by In-situ Reaction Method at High Temperature

CUI Sikai, FU Guangyan, LIN Lihai, YAN Yukun, LI Chusen

表1 T2000#和T2200#样品的定量分析结果

Table 1 Results of quantitative analysis of T2000# and T2200# samples

I(hight) RIR(K) Wi T2000#β-SiC 385180 3.53 79.7% T2000#α-SiC 36995 1.33 20.3% T2200#β-SiC 248248 3.53 56.6% T2200#α-SiC 71587 1.33 43.4%