碳化硅吸波材料的原位反应法制备及其机理
Preparation Process and Reaction Mechanism of Silicon Carbide Absorbing Materials by In-situ Reaction Method at High Temperature
碳化硅吸波材料的原位反应法制备及其机理 |
| 崔思凯, 付广艳, 林立海, 颜雨坤, 李处森 |
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Preparation Process and Reaction Mechanism of Silicon Carbide Absorbing Materials by In-situ Reaction Method at High Temperature |
| CUI Sikai, FU Guangyan, LIN Lihai, YAN Yukun, LI Chusen |
| 图10 不同厚度T1800、T2000、T2200试样的反射率 |
| Fig.10 Reflectivity of T1800, T2000, T2200 specimens of different thicknesses |
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