| 碳化硅吸波材料的原位反应法制备及其机理 | 
| 崔思凯, 付广艳, 林立海, 颜雨坤, 李处森 | 
| Preparation Process and Reaction Mechanism of Silicon Carbide Absorbing Materials by In-situ Reaction Method at High Temperature | 
| CUI Sikai, FU Guangyan, LIN Lihai, YAN Yukun, LI Chusen | 
| 图5 T2000试样的TEM表征 | 
| Fig.5 TEM characterization of T2000 sample: (a) low-magnification image of the T2000 specimen, (b) high power diagram of T2000 sample, the upper right corner is the FFT diagram of b diagram, (c) selected area electron diffraction pattern of figure a, (d) enlarged view of the selected area of figure b | 
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