碳化硅吸波材料的原位反应法制备及其机理
Preparation Process and Reaction Mechanism of Silicon Carbide Absorbing Materials by In-situ Reaction Method at High Temperature
碳化硅吸波材料的原位反应法制备及其机理 |
| 崔思凯, 付广艳, 林立海, 颜雨坤, 李处森 |
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Preparation Process and Reaction Mechanism of Silicon Carbide Absorbing Materials by In-situ Reaction Method at High Temperature |
| CUI Sikai, FU Guangyan, LIN Lihai, YAN Yukun, LI Chusen |
| 图4 T1800试样的TEM表征 |
| Fig.4 TEM characterization of T1800 sample (a) low-magnification image of the T1800 specimen, (b) high-magnification image of the T1800 specimen, (c) selected area electron diffraction pattern of figure a, (d) enlarged view of selected area of figure b |
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