碳化硅吸波材料的原位反应法制备及其机理
Preparation Process and Reaction Mechanism of Silicon Carbide Absorbing Materials by In-situ Reaction Method at High Temperature
碳化硅吸波材料的原位反应法制备及其机理 |
| 崔思凯, 付广艳, 林立海, 颜雨坤, 李处森 |
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Preparation Process and Reaction Mechanism of Silicon Carbide Absorbing Materials by In-situ Reaction Method at High Temperature |
| CUI Sikai, FU Guangyan, LIN Lihai, YAN Yukun, LI Chusen |
| 图2 SiC试样的SEM表征 |
| Fig.2 SEM characterization of SiC samples (a) SEM image of the T1800 specimen, (b) SEM image of the T2000 specimen, (c) SEM image of the T2200 specimen, (d) typical surface morphology of SiC grain growth at 2000oC |
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