中空FeS2/NiS2/Ni3S2@NC立方体复合材料的制备及其电化学性能 |
刘莹, 陈平, 周雪, 孙晓杰, 王瑞琪 |
Preparation and Electrochemical Properties of Hollow FeS2/NiS2/Ni3S2@NC Cube Composites |
LIU Ying, CHEN Ping, ZHOU Xue, SUN Xiaojie, WANG Ruiqi |
图10 FeS2/NiS2/Ni3S2@NC在不同扫速下的CV曲线、不同氧化还原峰处的lg(i)与lg(ʋ)的比值、不同扫速下的赝电容和扩散控制电容贡献率以及0.8 mV·s-1下的赝电容贡献 |
Fig.10 CV curves of FeS2/NiS2/Ni3S2@NC at various scan rates (a), the ratios of lg(i) to lg(ʋ) at different oxidation/reduction peaks (b), the contribution of capacitance and diffusion controlled capacitance at different scan rates (c), the proportions of capacitance in the total charge contribution (d) at a scan rate of 0.8 mV·s-1 |
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