β-In2Se3 堆垛缺陷的电子显微学研究

β-In₂Se₃ 堆垛缺陷的电子显微学研究

王强, 朱鹤雨, 刘志博, 朱毅, 刘培涛, 任文才

Electron Microscopy Study of Stacking Defects in β-In₂Se₃

WANG Qiang, ZHU Heyu, LIU Zhibo, ZHU Yi, LIU Peitao, REN Wencai

表1 β-In₂Se₃的层错构型及其对应的堆垛层错能

Table 1 Stacking fault configurations and corresponding SFEs of β-In₂Se₃

Configuration	Stacking fault	c / nm	n	SFE / mJ·m^-2
$\bar{A} C \bar{A} C \bar{A} C \bar{A} C \bar{A} C \bar{A} C$	2H β-In₂Se₃	11.057	-	-
$\bar{A} C \bar{A} C \| C \bar{A} C \bar{A} C \bar{A} \| \bar{A} C$	tISF	11.067	2	99.9
$\bar{A} C \bar{A} C \bar{A} \| B \| \bar{A} C \bar{A} C \bar{A} C$	RSF	11.054	2	6.3
$\bar{A} C \bar{A} C \| \bar{B} A \bar{B} A \bar{B} \| C \bar{A} C$	SSF	11.056	2	11.3
$\bar{A} C \bar{A} C \| B \| \bar{A} C \bar{A} C \| B \| \bar{A} C$	ISF	11.020	4	-13.3
$B \bar{C} B \bar{C} B \bar{C} \| \bar{A} C \bar{A} C \bar{A} C \|$	tSSF	11.024	2	-28.8
$C B A C B A C B A C B A$	3R β-In₂Se₃	10.935	-	-
$C B A C \| C B A C \| C B A C \|$	SSF(tISF)	10.999	3	124.7
$C B A \| \bar{B} \| C B A \| \bar{B} \| C B A \| \bar{B} \|$	rISF	10.984	6	41.2
$A A A A A A A A A A A A$	1T β-In₂Se₃	11.234	-	-
$A A A A A A \| \bar{B} \| A A A A A$	rISF	11.234	2	-49.2
$A A A A \| C C C C \| B B B B \|$	SSF	11.157	3	-107.5