β-In2Se3 堆垛缺陷的电子显微学研究
Electron Microscopy Study of Stacking Defects in β-In2Se3
β-In2Se3 堆垛缺陷的电子显微学研究 |
| 王强, 朱鹤雨, 刘志博, 朱毅, 刘培涛, 任文才 |
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Electron Microscopy Study of Stacking Defects in β-In2Se3 |
| WANG Qiang, ZHU Heyu, LIU Zhibo, ZHU Yi, LIU Peitao, REN Wencai |
| 图2 2H β-In2Se3的堆垛层错结构 |
| Fig.2 Stacking fault of 2H β-In2Se3 (a) A low-magnification cross-sectional HAADF-STEM image of the 2H β-In2Se3. The inset is the corresponding FFT patten, (b) Atomic-scale HAADF-STEM image of 2H β-In2Se3 with a RSF indicated by the black dashed line, (c) Atomic-scale HAADF-STEM image of 2H β-In2Se3 with SSFs indicated by the blue dashed lines, (d) Atomic-scale HAADF-STEM image of 2H β-In2Se3 with a high density of RSFs and SSFs. The positions of RSFs and SSFs are denoted by the black and blue dashed lines, respectively, (e) Atomic-scale HAADF-STEM image of 2H β-In2Se3 with a tSSF indicated by the red dashed line |
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