单晶碳化硅接触中亚表层损伤与破坏机理的原子尺度分析
Atomic Analysis of Contact-induced Subsurface Damage Behavior of Single Crystal SiC Based on Molecular Simulation
单晶碳化硅接触中亚表层损伤与破坏机理的原子尺度分析 |
| 王胜, 周俏亭, 占慧敏, 陈晶晶 |
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Atomic Analysis of Contact-induced Subsurface Damage Behavior of Single Crystal SiC Based on Molecular Simulation |
| WANG Sheng, ZHOU Qiaoting, ZHAN Huimin, CHEN Jingjing |
| 图8 单晶碳化硅纳米压痕受载诱导的von Mises stress随使役温度的变化 |
| Fig.8 The change of load-induced von Mises stress of single crystal silicon carbide during nanoindentation with the operating temperature |
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