单晶碳化硅接触中亚表层损伤与破坏机理的原子尺度分析

王胜, 周俏亭, 占慧敏, 陈晶晶

Atomic Analysis of Contact-induced Subsurface Damage Behavior of Single Crystal SiC Based on Molecular Simulation

WANG Sheng, ZHOU Qiaoting, ZHAN Huimin, CHEN Jingjing

图7 单晶碳化硅基底亚表层损伤结构类型转化随温度的变化

Fig.7 The change of damage structure type of single crystal silicon carbide substrate with temperature