单晶碳化硅接触中亚表层损伤与破坏机理的原子尺度分析

王胜, 周俏亭, 占慧敏, 陈晶晶

Atomic Analysis of Contact-induced Subsurface Damage Behavior of Single Crystal SiC Based on Molecular Simulation

WANG Sheng, ZHOU Qiaoting, ZHAN Huimin, CHEN Jingjing

图6 单晶碳化硅纳米压痕时材料力学性能随使役温度的变化

Fig.6 Variation of mechanical properties of single crystal silicon carbide with service temperature during nanoindentation contact