单晶碳化硅接触中亚表层损伤与破坏机理的原子尺度分析

王胜, 周俏亭, 占慧敏, 陈晶晶

Atomic Analysis of Contact-induced Subsurface Damage Behavior of Single Crystal SiC Based on Molecular Simulation

WANG Sheng, ZHOU Qiaoting, ZHAN Huimin, CHEN Jingjing

图4 低温(5 K)下单晶碳化硅螺杆位错脆断的演化进程与温度对碳化硅的载荷与位移曲线的影响

Fig.4 Evolution of brittle fracture of single crystal silicon carbide screw dislocation at low temperature (5 K) and influence of temperature on load and displacement curves of silicon carbide