单晶碳化硅接触中亚表层损伤与破坏机理的原子尺度分析

王胜, 周俏亭, 占慧敏, 陈晶晶

Atomic Analysis of Contact-induced Subsurface Damage Behavior of Single Crystal SiC Based on Molecular Simulation

WANG Sheng, ZHOU Qiaoting, ZHAN Huimin, CHEN Jingjing

图2 低温(5K)下单晶碳化硅接触中的载荷与位移曲线关系

Fig.2 Relation of load and displacement curve in contact of single crystal silicon carbide at low temperature (5 K)