单晶碳化硅接触中亚表层损伤与破坏机理的原子尺度分析

王胜, 周俏亭, 占慧敏, 陈晶晶

Atomic Analysis of Contact-induced Subsurface Damage Behavior of Single Crystal SiC Based on Molecular Simulation

WANG Sheng, ZHOU Qiaoting, ZHAN Huimin, CHEN Jingjing

图1 纳米压痕接触中单晶碳化硅原子尺度物理模型与MD模拟示意图

Fig.1 Atomic scale physical model and MD simulation of single crystal silicon carbide during nanoindentation contact