Cu掺杂非晶碳薄膜的电学性能及其载流子输运行为
Electrical Properties and Carrier Transport Behavior of Cu Doped Amorphous Carbon Films
Cu掺杂非晶碳薄膜的电学性能及其载流子输运行为 |
| 闫春良, 郭鹏, 周靖远, 汪爱英 |
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Electrical Properties and Carrier Transport Behavior of Cu Doped Amorphous Carbon Films |
| YAN Chunliang, GUO Peng, ZHOU Jingyuan, WANG Aiying |
| 图14 不同Cu掺杂量a-C: Cu薄膜 的二次电子截至边、价带相对费米能级的位置以及 (c) 能带结构 |
| Fig.14 Secondary electron cutoff (a), the distance from valence band (Ev) to the Fermi level (EF) (b) and band structure (c) of a-C: Cu films with different contents |
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