Cu掺杂非晶碳薄膜的电学性能及其载流子输运行为
Electrical Properties and Carrier Transport Behavior of Cu Doped Amorphous Carbon Films
Cu掺杂非晶碳薄膜的电学性能及其载流子输运行为 |
| 闫春良, 郭鹏, 周靖远, 汪爱英 |
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Electrical Properties and Carrier Transport Behavior of Cu Doped Amorphous Carbon Films |
| YAN Chunliang, GUO Peng, ZHOU Jingyuan, WANG Aiying |
| 图10 Cu掺杂量不同的a-C: Cu薄膜在150~350 K的I-V曲线 |
| Fig.10 I-V plots of the a-C: Cu films with different Cu contents from 150 to 350 K |
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