Cu掺杂非晶碳薄膜的电学性能及其载流子输运行为

闫春良, 郭鹏, 周靖远, 汪爱英

Electrical Properties and Carrier Transport Behavior of Cu Doped Amorphous Carbon Films

YAN Chunliang, GUO Peng, ZHOU Jingyuan, WANG Aiying

图9 Cu掺杂量不同的a-C: Cu薄膜300 K时的 I-V特性曲线和电阻率的变化

Fig.9 I-V characteristic plots (a) and electrical resistiv-ity (b) at 300 K of the a-C: Cu films with differ-ent Cu contents