偏压技术在金刚石薄膜制备中应用的进展
邵思武1, 郑宇亭1,2, 安康1,2, 黄亚博1, 陈良贤1, 刘金龙1, 魏俊俊1, 李成明1(
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Progress on Application of Bias Technology for Preparation of Diamond Films
SHAO Siwu1, ZHENG Yuting1,2, AN Kang1,2, HUANG Yabo1, CHEN Liangxian1, LIU Jinlong1, WEI Junjun1, LI Chengming1()
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图13. 在-250 V偏压下N2/CH4等离子体中沉积10 min、30 min和60 min的超纳米金刚石薄膜的SEM 和TEM照片[
Fig.13. SEM micrographs with the insets showing the corresponding Raman spectra and HRTEM images for (a) (d) NUNCDB10 films, (b) (e) NUNCDB30 films, and (c) (f) NUNCDB60 films, which were grown in N2/CH4 plasma under -250 V bias voltage for 10, 30, and 60 min, respectively[
