偏压技术在金刚石薄膜制备中应用的进展
邵思武1, 郑宇亭1,2, 安康1,2, 黄亚博1, 陈良贤1, 刘金龙1, 魏俊俊1, 李成明1(
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Progress on Application of Bias Technology for Preparation of Diamond Films
SHAO Siwu1, ZHENG Yuting1,2, AN Kang1,2, HUANG Yabo1, CHEN Liangxian1, LIU Jinlong1, WEI Junjun1, LI Chengming1()
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图11. 金刚石在Si(001)上定向成核时间窗随偏压的变化和10 μm厚金刚石薄膜暴露于-200 V偏压环境下15 min后的形貌[
Fig.11. Variation of the process time window for oriented nucleation of diamond on Si (001) with the bias voltage, Filled circles mark heteroepitaxial films, while empty triangles correspond to samples without preferential azimuthal alignment (a) and 10 μm thick diamond films after 15 min exposure to the biasing conditions Ubias= -200 V[
