偏压技术在金刚石薄膜制备中应用的进展

邵思武¹, 郑宇亭¹^,², 安康¹^,², 黄亚博¹, 陈良贤¹, 刘金龙¹, 魏俊俊¹, 李成明¹(

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Progress on Application of Bias Technology for Preparation of Diamond Films

SHAO Siwu¹, ZHENG Yuting¹^,², AN Kang¹^,², HUANG Yabo¹, CHEN Liangxian¹, LIU Jinlong¹, WEI Junjun¹, LI Chengming¹(

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图10. 不同衬底上异质外延生长金刚石薄膜的表面形貌^{[42, 58, 67, 68]}

Fig.10. Heteroepitaxial diamond growth on different substrate materials: (a) (100) 3C-SiC, (b) (100) β-SiC, (c) (100) Si, (d) (111) Pt, (e) (100) Ir, (f) (111) 3C-SiC^{[42, 58, 67, 68]}