偏压技术在金刚石薄膜制备中应用的进展

邵思武¹, 郑宇亭¹^,², 安康¹^,², 黄亚博¹, 陈良贤¹, 刘金龙¹, 魏俊俊¹, 李成明¹(

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Progress on Application of Bias Technology for Preparation of Diamond Films

SHAO Siwu¹, ZHENG Yuting¹^,², AN Kang¹^,², HUANG Yabo¹, CHEN Liangxian¹, LIU Jinlong¹, WEI Junjun¹, LI Chengming¹(

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图9. 在硅^[65] 和金属铱上金刚石的形核密度与偏压的关系^[44]

Fig.9. Nucleation density on Si vs bias voltage for 2%, 5%, and 15% methane concentration (a) and the nucleation density on Ir and the bias current vs bias voltage for 1% methane concentration (b)