偏压技术在金刚石薄膜制备中应用的进展
邵思武1, 郑宇亭1,2, 安康1,2, 黄亚博1, 陈良贤1, 刘金龙1, 魏俊俊1, 李成明1(
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Progress on Application of Bias Technology for Preparation of Diamond Films
SHAO Siwu1, ZHENG Yuting1,2, AN Kang1,2, HUANG Yabo1, CHEN Liangxian1, LIU Jinlong1, WEI Junjun1, LI Chengming1()
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图8. Ir衬底上BEN作用下金刚石外延形核过程：离子轰击诱导-掩埋横向生长机理[
Fig.8. Hetero-epitaxial nucleation process on Ir substrate under BEN: the ion bombardment induced-buried lateral growth mechanism[
