偏压技术在金刚石薄膜制备中应用的进展

邵思武¹, 郑宇亭¹^,², 安康¹^,², 黄亚博¹, 陈良贤¹, 刘金龙¹, 魏俊俊¹, 李成明¹(

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Progress on Application of Bias Technology for Preparation of Diamond Films

SHAO Siwu¹, ZHENG Yuting¹^,², AN Kang¹^,², HUANG Yabo¹, CHEN Liangxian¹, LIU Jinlong¹, WEI Junjun¹, LI Chengming¹(

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图7. 典型BEN参数下几种粒子的强度分布(P=25 mbar, T=800℃, MW power=900 W, U_bias=^{-200 V, 100 sccm H₂, 0.25 sccm CH₄)和不同离子的总离子通量随负偏压的变化}

Fig.7. Intensity distribution of several ion species for typical BEN conditions (P=25 mbar, T=800℃, MW power=900 W, U_bias=^{-200 V, 100 sccm H₂, 0.25 sccm CH₄) (a), total ion fluxes of different groups of ions as a function of bias voltage (b) CSum—the total flux of carbon containing C _x H _y⁺, HSum—the total flux of H_y⁺ and AllSum—the total measured ion flux^[51]}