氧控In2O3薄膜的光电性能
|
|
孙茂林, 宫震, 王施文, 尹航, 李瑞武, 张政, 李雨彤, 吴法宇
|
Optical and Electrical Properties of Oxygen-controlled In2O3 Film
|
|
SUN Maolin, GONG Zhen, WANG Shiwen, YIN Hang, LI Ruiwu, ZHANG Zheng, LI Yutong, WU Fayu
|
|
表1 In2O3薄膜的溅射工艺参数
|
Table 1 Sputtering parameters of In2O3 film
|
|
| Parameter | Value |
|---|
| Background vacuum/Pa | 3.0×10-3 | | Sputtering pressure/Pa | 1.1×10-1 | | Sputtering power/W | 150 | | Substrate-target distance/cm | 13 | | Substrate temperature | Room temperature | | Sputtering time/min | 70 (Ar)/120 (Ar+O2) | | Flow ratio of Ar and O2/sccm | 11:0 (Ar)/10:1 (Ar+O2) | | Deposited rate/nm·min-1 | 4.3 (Ar)/2.5 (Ar+O2) | | Oxygen partial pressure/Pa | 0 (Ar)/1.0×10-2 (Ar+O2) |
|
|
|