氧控In2O3薄膜的光电性能
孙茂林, 宫震, 王施文, 尹航, 李瑞武, 张政, 李雨彤, 吴法宇

Optical and Electrical Properties of Oxygen-controlled In2O3 Film
SUN Maolin, GONG Zhen, WANG Shiwen, YIN Hang, LI Ruiwu, ZHANG Zheng, LI Yutong, WU Fayu
图1 In2O3薄膜的退火处理曲线(a)和SEM照片:制备于纯Ar气氛(b);制备于氧分压为1.0×10-2 Pa的气氛(c);退火于氧分压为1.0×10-2 Pa的气氛(d)
Fig.1 Annealing curve (a) and SEM images of In2O3 film prepared in pure Ar atmosphere (b), in the condition of oxygen partial pressure 1.0×10-2 Pa (c) and annealed under oxygen partial pressure 1.0×10-2 Pa (d)