B2O3Al2O3共同掺杂ZnO压敏陶瓷的性能
王昊, 赵洪峰, 康加爽, 周远翔, 谢清云

Properties of ZnO Varistor Ceramics Co-doped with B2O3 and Al2O3
WANG Hao, ZHAO Hongfeng, KANG Jiashuang, ZHOU Yuanxiang, XIE Qingyun
表1 不同B掺杂量样品的电性能和微观结构参数
Table 1 Electrical properties and microstructure parameters of samples with different B doping amounts

B content

/%, mole fraction

d

/μm

Nd

/1027m-3

Ni

/1018m-2

Φb

/eV

Eb

/V·mm-1

JL

/μA·cm-2

αKGrain boundary resistance/kΩ
0.06.581.861.811.664704.06511.5729.69
1.56.611.982.031.984742.52671.5845.14
3.06.622.592.862.984750.161061.5774.68
4.56.662.232.272.174790.25861.5952.53