溅射沉积富镁Mg3Bi2薄膜的热电性能

溅射沉积富镁Mg₃Bi₂薄膜的热电性能

宋贵宏, 李秀宇, 李贵鹏, 杜昊, 胡方

Thermoelectric Properties of Mg-rich Mg₃Bi₂ Films Prepared by Magnetron Sputtering

SONG Guihong, LI Xiuyu, LI Guipeng, DU Hao, HU Fang

表1 沉积薄膜的化学成分

Table 1 Chemical composition of deposited films

Sample	Mg target sputtering time/s	Mg (%, atom fraction)	Bi (%, atom fraction)	Residual metal Mg (%, atom fraction)
S1	60 s	79.89	20.11	49.72
S2	90 s	83.15	16.85	57.87
S3	120s	90.94	9.06	77.35
S4	150 s	96.12	3.88	90.30