Ti掺杂MoS2薄膜的抗氧化性和电学性能

谢明玲, 张广安, 史鑫, 谭稀, 高晓平, 宋玉哲

Anti-oxidization and Electronic Properties of Ti Doped MoS2 Films

XIE Mingling, ZHANG Guang'an, SHI Xing, TAN Xi, GAO Xiaoping, SONG Yuzhe

表1 Pure MoS2、02A Ti-MoS2、04A Ti-MoS2和06A Ti-MoS2薄膜在26℃ RH70%条件下存储336 h前后的半导体性能参数

Table 1 Electronic parameters of pure MoS2, 02A Ti-MoS2, 04A Ti-MoS2 and 06A Ti-MoS2 before and after stored at 26℃, RH70% condition

As-deposited film After 336 h RH70% Eg/eV ρ/Ω·m R□ /Ω Eg/eV ρ/Ω·m R□ /Ω Pure MoS2 2.21 6.97×10-5 174.28 2.30 7.00×10-5 174.98 0.2A Ti-MoS2 1.66 5.83×10-5 143.54 1.81 5.79×10-5 144.75 0.4A Ti-MoS2 1.91 3.26×10-5 81.52 2.01 3.33×10-5 83.23 0.6A Ti-MoS2 1.89 3.33×10-5 83.29 2.00 3.33×10-5 83.22