Ti掺杂MoS2薄膜的抗氧化性和电学性能
谢明玲1, 张广安2, 史鑫1, 谭稀1, 高晓平1, 宋玉哲1(
)
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Anti-oxidization and Electronic Properties of Ti Doped MoS2 Films
XIE Mingling1, ZHANG Guang'an2, SHI Xing1, TAN Xi1, GAO Xiaoping1, SONG Yuzhe1()
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图3. PureMoS2、0.2A Ti-MoS2、0.4A Ti-MoS2和0.6A Ti-MoS2薄膜在26℃和RH70%条件下存储336 h前后的紫外漫反射谱
Fig.3. Reflection spectrum of pure MoS2, 0.2A Ti-MoS2, 0.4A Ti-MoS2 and 0.6A Ti-MoS2 before and after stored at 26℃, RH70% condition
