基于分子动力学模拟的纳米多晶α-碳化硅变形机制
施渊吉1, 陈显冰1, 吴修娟1, 王红军1(
), 郭训忠2, 黎军顽3
), 郭训忠2, 黎军顽3
Deformation Mechanism of Nanoscale Polycrystalline α-Silicon Carbide Based on Molecular Dynamics Simulation
SHI Yuanji1, CHEN Xianbing1, WU Xiujuan1, WANG Hongjun1(), GUO Xunzhong2, LI Junwan3
), GUO Xunzhong2, LI Junwan3
图6. 在900K的压痕过程中位错的演化
Fig.6. Dislocation evolution during indentation at 900K (a)~(f) the distribution of atomics structures at h=1.0, 1.4, 1.8, 2.2, 2.6 and 3.0 nm
