<strong>Al</strong>预沉积层对金属有机物化学气相沉积方法在<strong>Si</strong>衬底上生长<strong>AlN</strong>缓冲层和<strong>GaN</strong>外延层的影响

Al预沉积层对金属有机物化学气相沉积方法在Si衬底上生长AlN缓冲层和GaN外延层的影响

甄龙云, 彭鹏, 仇成功, 郑蓓蓉, Armaou Antonios, 钟蓉

Effect of Pre-deposited Al Layer on Growth of AlN Buffer Layer and GaN Film on Si Substrate by Metal-organic Chemical Vapor Deposition

ZHEN Longyun, PENG Peng, QIU Chenggong, ZHENG Beirong, ARMAOU Antonios, ZHONG Rong

表3 生长GaN缓冲层时气相-表面的化学反应

Table 3 Gas-surface reactions during the growth of GaN film

Type & No.	Reaction
G8	$G a {(C H_{3})}_{3} \to G a {(C H_{3})}_{2} + C H_{3}$
G9	$G a {(C H_{3})}_{2} \to G a C H_{3} + C H_{3}$
G10	$G a {(C H_{3})}_{3} + N H_{3} \to {(C H_{3})}_{3} G a : N H_{3}$
G11	${(C H_{3})}_{3} G a : N H_{3} \to G a {(C H_{3})}_{3} + N H_{3}$
G12	${(C H_{3})}_{3} G a : N H_{3} \to G a {(C H_{3})}_{2} : N H_{2} + C H_{4}$
G13	${(C H_{3})}_{2} G a : N H_{2} \to G a N (G) + 2 C H_{4}$
S8	$G a {(C H_{3})}_{3} + S \to G a (S) + 3 C H_{3}$
S9	$G a {(C H_{3})}_{2} + S \to G a (S) + 2 C H_{3}$
S10	$G a C H_{3} + S \to G a (S) + C H_{3}$
S11	$G a (S) + N H_{3} + 3 C H_{3} \to G a N (S) + 3 C H_{4}$
S12	$x G a (S) + y S i (S) \to G a_{x} S i_{y} (S)$
S13	$2 x S i (S) + 2 y N H_{3} \to 2 S i_{x} N_{y} (S) + 3 y H_{2}$
S14	$G a N (G) + 2 S \to G a N (S)$